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S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible

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S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible

S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible
S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible

Grote Afbeelding :  S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible

Productdetails:
Plaats van herkomst: Japan
Merknaam: Hamamatsu
Modelnummer: S1226-8BK
Betalen & Verzenden Algemene voorwaarden:
Min. bestelaantal: 1
Prijs: Onderhandelbaar
Verpakking Details: Standaarddoos
Levertijd: 3-5Working Days
Betalingscondities: L/C, D/A, D/P, T/T, Western Union,
Levering vermogen: 3000 pcs/maanden

S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible

beschrijving
Pakket: TO-8 Grootte van het lichtgevoelige gebied: 5.8 x 5,8 mm
Omgekeerde spanning VR Max.: 5V Bedrijfstemperatuur: -40 tot +100°C
Markeren:

UV photodiode sensor with suppressed IR

,

Si photodiode for UV to visible

,

S1226-8BK photodiode near IR suppressed

S1226-8BK Si PhotodiodeSuppressed Near IR Sensitivity UV to Visible Features Suppressed near IR sensitivity High sensitivity in UV region (quartz glass type) Low dark current High reliability Applications >Analytical equipment >Optical measurement equipment, etc. Specification: Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 1200 pF

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ShenzhenYijiajie Electronic Co., Ltd.

Contactpersoon: Xu

Tel.: 86+13352990255

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